Published September 12, 2020 | Version v1
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PHOTOLUMINESCENCE OBSERVATIONS OF DONOR-ACCEPTOR EMISSION IN MILLED Cd0.3Zn0.7Se NANOCRYSTALS

  • 1. Umaru Musa Yar'adua University

Description

Defects and impurities that arise during material synthesis are detrimental to device performance. Hence, an effective characterization tool is fundamental to effectively quantify and understand the origin of such defects. In this paper, we examine photoluminescence spectra (PL) from (650-900) nm of mechanically alloyed Cd0.3Zn0.7Se nanocrystals and observe three prominent emission peaks (1.4, 1.8, and 1.54) eV. The peaks were pinned at a fixed position despite a decrease in crystallites size which ought to increase the energy bandgap. The intensity of the peaks increases with milling time due to longer milling time which gives rise to a higher density of intrinsic defects. This was attributed to continuous deformations from the milling process. The formation energies of acceptor and donor defects remain constant to the conduction and valance band edge

⚠️ This is an automatic machine translation with an accuracy of 90-95%

Translated Description (Arabic)

العيوب والشوائب التي تنشأ أثناء تركيب المواد تضر بأداء الجهاز. وبالتالي، فإن أداة التوصيف الفعالة ضرورية لتحديد وفهم أصل هذه العيوب بشكل فعال. في هذه الورقة، نقوم بفحص أطياف التلألؤ الضوئي (PL) من (650-900) نانومتر من البلورات النانوية Cd0.3Zn0.7Se المخلوطة ميكانيكيًا ونلاحظ ثلاث قمم انبعاث بارزة (1.4 و 1.8 و 1.54) فولت. تم تثبيت القمم في موضع ثابت على الرغم من انخفاض حجم البلورات الذي يجب أن يزيد من فجوة نطاق الطاقة. تزداد شدة القمم مع وقت الطحن بسبب وقت الطحن الأطول مما يؤدي إلى كثافة أعلى من العيوب الجوهرية. ويعزى ذلك إلى التشوهات المستمرة من عملية الطحن. تظل طاقات تكوين عيوب المستقبل والمانح ثابتة على حافة نطاق التوصيل والتكافؤ

Translated Description (English)

Defects and impurities that arise during material synthesis are detrimental to device performance. Hence, an effective characterization tool is fundamental to effectively quantify and understand the origin of such defects. In this paper, we examine photoluminescence spectra (PL) from (650-900) nm of mechanically alloyed Cd0.3Zn0.7Se nanocrystals and observe three prominent emission peaks (1.4, 1.8, and 1.54) eV. The peaks were pinned at a fixed position despite a decrease in crystallites size which ought to increase the energy bandgap. The intensity of the peaks increases with milling time due to longer milling time which gives rise to a higher density of intrinsic defects. This was attributed to continuous deformations from the milling process. The formation energies of acceptor and donor defects remain constant to the conduction and valance band edge

Translated Description (French)

Defects and impurities that arise during material synthesis are detrimental to device performance. Hence, an effective characterization tool is fundamental to effectively quantify and understand the origin of such defects. In this paper, we examine photoluminescence spectra (PL) from (650-900) nm of mechanically alloyed Cd0.3Zn0.7Se nanocrystals and observe three prominent emission peaks (1.4, 1.8, and 1.54) eV. The peaks were pinned at a fixed position despite a decrease in crystallites size which ought to increase the energy bandgap. L'intensité des pics augmente avec le temps de broyage dû au temps de broyage plus long, ce qui donne lieu à une densité plus élevée de défauts intrinsèques. This was attributed to continuous deformations from the milling process. The formation energies of acceptor and donor defects remain constant to the conduction and valance band edge

Translated Description (Spanish)

Defectos e impurezas que se acumulan durante la síntesis material son detrimental para el rendimiento del dispositivo. Hence, an effective characterization tool is fundamental to effectively quantify and understand the origin of such defects. In this paper, we examine photoluminescence spectra (PL) from (650-900) nm of mechanically alloyed Cd0.3Zn0.7Se nanocrystals and observe three prominent emission peaks (1.4, 1.8, and 1.54) eV. The peaks were pinned at a fixed position despite a decrease in crystallites size which ought to increase the energy bandgap. The intensity of the peaks increases with milling time due to longer milling time which gives rise to a higher density of intrinsic defects. This was attributed to continuous deformations from the milling process. The formation energies of acceptor and donor defects remain constant to the conduction and valance band edge

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Additional details

Additional titles

Translated title (Arabic)
ملاحظات التصوير الفوتوغرافي للانبعاثات المستقبلة للمانحين في Cd0.3Zn0.7Se NANOCRYSTALS
Translated title (English)
PHOTOLUMINESCENCE OBSERVATIONS OF donor acceptor EMISSION IN MILLED Cd0.3Zn0.7Se NANOCRYSTALS
Translated title (French)
PHOTOLUMINESCENCE OBSERVATIONS OF DONOR-ACCEPTOR EMISSION IN MILLED Cd0.3Zn0.7Se NANOCRYSTALS
Translated title (Spanish)
PHOTOLUMINESCENCE OBSERVATIONS OF DONOR-ACCEPTOR EMISSION IN MILLED Cd0.3Zn0.7Se NANOCRYSTALS

Identifiers

Other
https://openalex.org/W3091337686
DOI
10.33003/fjs-2020-0403-201

GreSIS Basics Section

Is Global South Knowledge
Yes
Country
Nigeria

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