Published March 1, 2018 | Version v1
Publication Open

Publisher's Note: "Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes" [AIP Advances 8, 015005 (2018)]

  • 1. Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
  • 2. Meijo University
  • 3. COMSATS University Islamabad
  • 4. Prince Sultan University

Description

First Page

⚠️ This is an automatic machine translation with an accuracy of 90-95%

Translated Description (Arabic)

الصفحة الأولى

Translated Description (French)

Première page

Translated Description (Spanish)

Primera página

Files

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Additional details

Additional titles

Translated title (Arabic)
ملاحظة الناشر: "تأثير تدهور إعادة تركيب المثقاب وحقل الاستقطاب المدمج على الثنائيات الباعثة للضوء القائمة على GaN" [AIP Advances 8، 015005 (2018)]
Translated title (French)
Note de l'éditeur : « Effet de dégradation de la recombinaison Auger et du champ de polarisation intégré sur les diodes électroluminescentes à base de GaN » [AIP Advances 8, 015005 (2018)]
Translated title (Spanish)
Nota del editor: "Degradation effect of Auger recombinination and built-in polarization field on GaN-based light-emitting diodes" [AIP Advances 8, 015005 (2018)]

Identifiers

Other
https://openalex.org/W2795012874
DOI
10.1063/1.5030116

GreSIS Basics Section

Is Global South Knowledge
Yes
Country
Pakistan