Published March 1, 2018
| Version v1
Publication
Open
Publisher's Note: "Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes" [AIP Advances 8, 015005 (2018)]
Creators
- 1. Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
- 2. Meijo University
- 3. COMSATS University Islamabad
- 4. Prince Sultan University
Description
First Page
Translated Descriptions
⚠️
This is an automatic machine translation with an accuracy of 90-95%
Translated Description (Arabic)
الصفحة الأولىTranslated Description (French)
Première pageTranslated Description (Spanish)
Primera páginaFiles
1.5030116.pdf
Files
(93 Bytes)
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Additional details
Additional titles
- Translated title (Arabic)
- ملاحظة الناشر: "تأثير تدهور إعادة تركيب المثقاب وحقل الاستقطاب المدمج على الثنائيات الباعثة للضوء القائمة على GaN" [AIP Advances 8، 015005 (2018)]
- Translated title (French)
- Note de l'éditeur : « Effet de dégradation de la recombinaison Auger et du champ de polarisation intégré sur les diodes électroluminescentes à base de GaN » [AIP Advances 8, 015005 (2018)]
- Translated title (Spanish)
- Nota del editor: "Degradation effect of Auger recombinination and built-in polarization field on GaN-based light-emitting diodes" [AIP Advances 8, 015005 (2018)]
Identifiers
- Other
- https://openalex.org/W2795012874
- DOI
- 10.1063/1.5030116